SSM4501GSD - Silicon Standard

SSM4501GSD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 D2 G1 Pb-free; RoHS-compliant G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source.

Features

eter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 01/28/2008 Rev.1.00 www.SiliconStandard.com 1 www.DataSheet4U.net SSM4501GSD N-CH ELECTRICAL CHARACTERISTICS @TJ=25 C (unless otherwise specified ) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 30 1 0.03 12 9 2 5 6 5 19 4 645 150 95 27 50 3 1 25 13 800 V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS=10V, ID=7A VGS=4.5V, ID=.