SSM4500GM - Silicon Standard

SSM4500GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 .

Features

℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 02/13/2008 Rev.1.00 www.SiliconStandard.com 1 www.DataSheet4U.net SSM4500GM N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 20 0.5 0.037 30 45 1.2 1 25 15 480 - V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltag.