SSM4507GM - Silicon Standard

SSM4507GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SO-8 SO-8 ID P-CH BVDSS RDS(ON) ID The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applicat.

Features

0 ±20 -4.2 -3.4 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 08/06/2007 Rev.1.00 www.SiliconStandard.com 1 www.DataSheet4U.net SSM4507GM N-CH ELECTRICAL CHARACTERISTICS @TJ=25 C (unless otherwise specified ) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.02 Max. Units 36 60 3 1 25 ±100 10 690 V V/℃ mΩ mΩ V S uA uA.