SSM4501GM - Silicon Standard

SSM4501GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 D2.

Features

℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 08/17/2007 Rev.1.00 www.SiliconStandard.com 1 www.DataSheet4U.net SSM4501GM N-CH ELECTRICAL CHARACTERISTICS @Tj=25 C (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 30 1 0.02 28 42 3 1 25 - V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temp.