SSM4513GM - Silicon Standard

SSM4513GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G1 ID D1 D2 G2 S1 S2 The SSM4513M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well-suited for most low vol.

Features

20 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 ±20 -4.3 -3.4 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 10/12/2004 Rev.2.01 www.SiliconStandard.com 1 of 8 www.DataSheet4U.net SSM4513M/GM N-ch Electrical Characteristics @ T j=25 C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 o Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 7 6 2 3 8 .