SSM452 - SeCoS

SSM452 P-Channel Enhancement Mode Power MOSFET

The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES    Simple Drive Requirement Lower On-resistance Fast Switching SOT-223 A M 4 Top View CB 1 2 3 MARKING  Drain K E L D F G H J  Gate REF. A B C D E F  Source Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.7.

Features

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 Simple Drive Requirement Lower On-resistance Fast Switching SOT-223 A M 4 Top View CB 1 2 3 MARKING  Drain K E L D F G H J  Gate REF. A B C D E F
 Source Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL Drain
  – Source Voltage Gate
  – Source Voltage Continuous Drain Current 3 1 RATING -30 ±20 -6.0 -4.8 -20 2.7 0.02 -55 ~ 150 45 UNIT V V A A A W W / °C °C °C / W VDS VGS TA = 25°C TA = 70°C.