The SSM452-C provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. SOT-223 FEATURES Simple Drive Requirement Lower On-resistance Fast Switching MARKING 452 = Date code PACKAGE INFORMATION Package MPQ SOT-223 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSM452-C L.
Simple Drive Requirement
Lower On-resistance
Fast Switching
MARKING
452
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSM452-C
Lead (Pb)-free and Halogen-free
Gate
Drain
Source
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
Pulsed Drain Current 2 Total Power Dissipation 3 Maximum Junction-Ambient 1 Maximum Junction-Case 1
TA=25°C TA=70°C
ID
IDM PD RθJA RθJC
Operating Junction & Stora.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSM452 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
2 | SSM4500GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | SSM4501GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | SSM4501GSD |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | SSM4502GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | SSM4507GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | SSM4507M |
Silicon Standard |
COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | SSM4509GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
9 | SSM4513GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
10 | SSM4513M |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
11 | SSM4532GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
12 | SSM4532M |
Silicon Storage Technology |
COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS |