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SSM4501GSD |
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| Part Number | SSM4501GSD |
| Manufacturer | Silicon Standard |
| Description | The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 D2 G1 ... |
| Features |
eter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
01/28/2008 Rev.1.00
www.SiliconStandard.com
1
www.DataSheet4U.net
SSM4501GSD
N-CH ELECTRICAL CHARACTERISTICS
@TJ=25 C (unless otherwise specified )
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. Typ. Max. Units 30 1 0.03 12 9 2 5 6 5 19 4 645 150 95 27 50 3 1 25 13 800 V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS=10V, ID=7A VGS=4.5V, ID=... |
| Document |
 SSM4501GSD Data Sheet
PDF 420.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSM4501GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | SSM4500GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | SSM4502GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | SSM4507GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | SSM4507M |
Silicon Standard |
COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|