SSM3K04FU - Toshiba Semiconductor

SSM3K04FU High Speed Switching Applications

SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications • • • • With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-so.

Features

wing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 1 2007-11-01 SSM3K04FU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance www.DataSheet4U.com Output capacitance Switching time Turn-on time Turn-off time Symbol.