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SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05 • • • • With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive High input impedance 1.2±0.05 0.8±0.05 0.4 Low gate threshold voltage: Vth = 0.7~1.3 V Absolute Maxi.
.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t) 0.5mm 0.45mm 0.45mm 0.4mm Marking 3 Equivalent Circuit 3 DC 1 2 RGS 1 2 1 2007-11-01 SSM3K04FV Electrical Cha.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSM3K04FE |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 2 | SSM3K04FS |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | SSM3K04FU |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 4 | SSM3K01F |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | SSM3K01T |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 6 | SSM3K02F |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
|
| 7 | SSM3K02T |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 8 | SSM3K03FE |
Toshiba Semiconductor |
Silicon N-Channel MOS Type FET |
|
| 9 | SSM3K03FV |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 10 | SSM3K03TE |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 11 | SSM3K05FU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 12 | SSM3K09FU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|