SSM3K04FU |
Part Number | SSM3K04FU |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications • • • • With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate t... |
Features |
wing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Equivalent Circuit
1
2007-11-01
SSM3K04FU
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance www.DataSheet4U.com Output capacitance Switching time Turn-on time Turn-off time Symbol... |
Document |
SSM3K04FU Data Sheet
PDF 616.17KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSM3K04FE |
Toshiba Semiconductor |
High Speed Switching Applications | |
2 | SSM3K04FS |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | SSM3K04FV |
Toshiba Semiconductor |
High Speed Switching Applications | |
4 | SSM3K01F |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | SSM3K01T |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |