SSM3K01T - Toshiba Semiconductor

SSM3K01T Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T SSM3K01T High Speed Switching Applications Unit: mm • Small Package • Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) • Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics .

Features

voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2, t = 10 s) Note 2: The pulse width limited by max channel temperature. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is prot.