SSM3K02T - Toshiba Semiconductor

SSM3K02T High Speed Switching Applications

SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications • • • Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) w w w . D a t a S h e e t 4 U . c o m Unit: mm Absolute Maximum Ratings .

Features

within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature. Marking 3 Equivalent Circuit 3 KU 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure .