SSM3K03FE - Toshiba Semiconductor

SSM3K03FE Silicon N-Channel MOS Type FET

SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications · · · · 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Dra.

Features

ton toff Test Condition VGS = 10 V, VDS = 0 ID = 100 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min ¾ 20 ¾ 0.7 25 ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ 50 4 11.0 3.3 9.3 0.16 0.19 Max 1 ¾ 1 1.3 ¾ 12 ¾ ¾ ¾ ¾ ¾ Unit mA V mA V mS W pF pF pF ms Switching Time Test Circuit (a) Test circuit (b) VIN VGS (c) VOUT VDS 2 2003-03-27 SSM3K03FE 3 2003-03-27 SSM3K03FE 4 2003-03-27 SSM3K03F.