SSM3K04FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FS High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ (typ.) • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Ga.
iewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 1 2007-11-01 SSM3K04FS Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Gate-sou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSM3K04FE |
Toshiba Semiconductor |
High Speed Switching Applications | |
2 | SSM3K04FU |
Toshiba Semiconductor |
High Speed Switching Applications | |
3 | SSM3K04FV |
Toshiba Semiconductor |
High Speed Switching Applications | |
4 | SSM3K01F |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | SSM3K01T |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | SSM3K02F |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | |
7 | SSM3K02T |
Toshiba Semiconductor |
High Speed Switching Applications | |
8 | SSM3K03FE |
Toshiba Semiconductor |
Silicon N-Channel MOS Type FET | |
9 | SSM3K03FV |
Toshiba Semiconductor |
High Speed Switching Applications | |
10 | SSM3K03TE |
Toshiba Semiconductor |
High Speed Switching Applications | |
11 | SSM3K05FU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
12 | SSM3K09FU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |