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SSM3J327F |
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| Part Number | SSM3J327F |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM3J327F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J327F ○ Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 242 mΩ (max) (@V... |
| Features |
may cause this product to decrease in the
JEITA TOSHIBA
SC-59 2-3F1F
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Weight: 12 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 bo... |
| Document |
 SSM3J327F Data Sheet
PDF 226.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM3J327R |
Toshiba Semiconductor |
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| 2 | SSM3J321T |
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Silicon P-Channel MOSFET |
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| 3 | SSM3J325F |
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Silicon P-Channel MOSFET |
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| 4 | SSM3J326T |
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Silicon P-Channel MOSFET |
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| 5 | SSM3J328R |
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Silicon P-Channel MOSFET |
|