SSM3J325F |
Part Number | SSM3J325F |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 311 mΩ (max) (@V... |
Features |
mperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3F1F
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
Weight: 12 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a... |
Document |
SSM3J325F Data Sheet
PDF 254.26KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSM3J321T |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
2 | SSM3J326T |
Toshiba |
Silicon P-Channel MOSFET | |
3 | SSM3J327F |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
4 | SSM3J327R |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
5 | SSM3J328R |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |