SSM3J307T |
Part Number | SSM3J307T |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance:... |
Features |
perature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3S1A
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Weight: 10 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an... |
Document |
SSM3J307T Data Sheet
PDF 249.36KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSM3J304T |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
2 | SSM3J305T |
Toshiba Semiconductor |
Field-Effect Transistor Silicon P-Channel MOS Type | |
3 | SSM3J306T |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
4 | SSM3J317T |
Toshiba Semiconductor |
Power Management Switch Applications High-Speed Switching Applications | |
5 | SSM3J321T |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |