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SSM3J305T |
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| Part Number | SSM3J305T |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications • • 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V... |
| Features |
tions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Note:
JEDEC JEITA TOSHIBA
― ― 2-3S1A
Weight: 10 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Drain –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain –source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Cha... |
| Document |
 SSM3J305T Data Sheet
PDF 201.89KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM3J304T |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
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| 2 | SSM3J306T |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
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| 3 | SSM3J307T |
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Silicon P-Channel MOSFET |
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| 4 | SSM3J317T |
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Power Management Switch Applications High-Speed Switching Applications |
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| 5 | SSM3J321T |
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