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SSM3J304T |
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| Part Number | SSM3J304T |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8-V drive • Low ON-resistance: RDS(ON) ... |
| Features |
aximum ratings.
Weight: 10 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
3
JJ2
1
2
Equivalent Circuit (top view)
3
1
2
Start of commercial production
2006-09
1
2014-03-01
SSM3J304T
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Drain cutof... |
| Document |
 SSM3J304T Data Sheet
PDF 267.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM3J305T |
Toshiba Semiconductor |
Field-Effect Transistor Silicon P-Channel MOS Type |
|
| 2 | SSM3J306T |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 3 | SSM3J307T |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | SSM3J317T |
Toshiba Semiconductor |
Power Management Switch Applications High-Speed Switching Applications |
|
| 5 | SSM3J321T |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|