Elektronische Bauelemente SSD20N15 20A, 150V, RDS(ON) 70mΩ N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES 150V, 20A, RDS(ON)≦70mΩ@VGS=10V Super high dense cell design for extremely low RDS(ON) High power and current handing capability Green Device Available TO-252 (D-Pack) PACKAGE INFORMATION Package.
150V, 20A, RDS(ON)≦70mΩ@VGS=10V Super high dense cell design for extremely low RDS(ON) High power and current handing capability Green Device Available TO-252 (D-Pack) PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch MARKING 20N15 Date Code 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @VGS=10V 1 TC=25°C ID TC=100°C Pulsed Drain Current 2 IDM Total Power Dissipation 3 TC=25°C PD TA=25°C Operating Junction and Storage Tempe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSD20N10-250D |
SeCoS |
N-Channel MOSFET | |
2 | SSD20N15-250D |
SeCoS |
N-Channel MOSFET | |
3 | SSD20N03 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SSD20N06 |
SeCoS |
N-channel MOSFET | |
5 | SSD20N06-90D |
SeCoS |
N-Channel MOSFET | |
6 | SSD20N06-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
7 | SSD2007A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
8 | SSD2009A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
9 | SSD2011A |
Fairchild Semiconductor |
Dual P-CHANNEL POWER MOSFET | |
10 | SSD2019A |
Fairchild Semiconductor |
Dual P-Channel Power MOSFET | |
11 | SSD2025 |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
12 | SSD2030N |
South Sea Semiconductor |
N-Channel MOSFET |