SSD2009A - Fairchild Semiconductor

SSD2009A Dual N-CHANNEL POWER MOSFET

Dual N-CHANNEL POWER MOSFET FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2009A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 ▼ Product Summary Part Number SSD2009 BVDSS 50V RDS(on) 0.13Ω ID 3.

Features

! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2009A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 ▼ Product Summary Part Number SSD2009 BVDSS 50V RDS(on) 0.13Ω ID 3.0A S1 ,S2 N -Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( .