These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TO-252(D-Pack) FEAT.
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.
A B
C D
PRODUCT SUMMARY
VDS(V) 150 PRODUCT SUMMARY RDS(on) m( 255@VGS= 10V 290@VGS= 5.5V
K
GE
HF
ID(A) 12 11
Gate
Drain
M
J
N O P
REF.
http://www.DataSheet4U.net/
Source
A B C D E F G H
Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58
ABS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSD20N15 |
SeCoS |
N-CHANNEL MOSFET | |
2 | SSD20N10-250D |
SeCoS |
N-Channel MOSFET | |
3 | SSD20N03 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SSD20N06 |
SeCoS |
N-channel MOSFET | |
5 | SSD20N06-90D |
SeCoS |
N-Channel MOSFET | |
6 | SSD20N06-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
7 | SSD2007A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
8 | SSD2009A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
9 | SSD2011A |
Fairchild Semiconductor |
Dual P-CHANNEL POWER MOSFET | |
10 | SSD2019A |
Fairchild Semiconductor |
Dual P-Channel Power MOSFET | |
11 | SSD2025 |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
12 | SSD2030N |
South Sea Semiconductor |
N-Channel MOSFET |