The SSD20N06 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. The SSD20N06 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low .
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 20N06 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 1 Gate 2 Drain 3 Source TO-252(D-Pack) A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.41 0.9 N 1.55 Typ. E6 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSD20N03 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SSD20N06-90D |
SeCoS |
N-Channel MOSFET | |
3 | SSD20N06-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SSD20N10-250D |
SeCoS |
N-Channel MOSFET | |
5 | SSD20N15 |
SeCoS |
N-CHANNEL MOSFET | |
6 | SSD20N15-250D |
SeCoS |
N-Channel MOSFET | |
7 | SSD2007A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
8 | SSD2009A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
9 | SSD2011A |
Fairchild Semiconductor |
Dual P-CHANNEL POWER MOSFET | |
10 | SSD2019A |
Fairchild Semiconductor |
Dual P-Channel Power MOSFET | |
11 | SSD2025 |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
12 | SSD2030N |
South Sea Semiconductor |
N-Channel MOSFET |