SSD20N06-C - SeCoS

SSD20N06-C N-Ch Enhancement Mode Power MOSFET

The SSD20N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. The SSD20N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced high cell density Trench technology  Su.

Features

 Advanced high cell density Trench technology
 Super Low Gate Charge
 Green Device Available MARKING 20N06   = Date Code PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch 2 ORDER INFORMATION Drain Part Number Type 1 SSD20N06-C Lead (Pb)-free and Halogen-free Gate TO-252(D-Pack) A B C D GE K HF N O P M J Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.35 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.41 0.9 N 1.55 Typ. E6 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2 Mounting Pad Layout 3 S.