Dual N-CHANNEL POWER MOSFET FEATURES ! Extremely Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2007A 8 SOP S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 ▼ ▼ S1 ,S2 N-Cha.
! Extremely Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2007A 8 SOP S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 ▼ ▼ S1 ,S2 N-Channel MOSFET Absolute Maximum Ratings Symbol VDSS VDGR VGS ID ID IDM PD TJ , TSTG TL Notes ; (1) TJ= 25℃ to 150℃ (2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature Characteristic Drain-to-Source Voltage(1) Drain-Gate Voltage(RGS=1.0MΩ)(1) Gate-to-Source .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSD2009A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
2 | SSD2011A |
Fairchild Semiconductor |
Dual P-CHANNEL POWER MOSFET | |
3 | SSD2019A |
Fairchild Semiconductor |
Dual P-Channel Power MOSFET | |
4 | SSD2025 |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
5 | SSD2030N |
South Sea Semiconductor |
N-Channel MOSFET | |
6 | SSD2030P |
South Sea Semiconductor |
P-Channel Enhancement Mode MOSFET | |
7 | SSD20N03 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSD20N06 |
SeCoS |
N-channel MOSFET | |
9 | SSD20N06-90D |
SeCoS |
N-Channel MOSFET | |
10 | SSD20N06-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
11 | SSD20N10-250D |
SeCoS |
N-Channel MOSFET | |
12 | SSD20N15 |
SeCoS |
N-CHANNEL MOSFET |