SSD2030N - South Sea Semiconductor

SSD2030N N-Channel MOSFET

SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 10V 30V 20A 55 @VGS = 4.5V G S D TO-252 D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain .

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 30 + - 20 20 60 20 50 -55 to 175 Unit V V A A A W o Drain-Source Diode Forward Current a IS o Maximum Power Dissipation @TC = 25 C Operating Junction and Storage Temperature Range PD TJ, TSTG C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient a R R JC 3 o.