Dual P-CHANNEL POWER MOSFET FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 SSD2011A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 Product Summary Part Number SSD2011A BVDSS - 60V RDS(on) 0.280Ω ID - 2.0A .
! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 SSD2011A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 Product Summary Part Number SSD2011A BVDSS - 60V RDS(on) 0.280Ω ID - 2.0A S1, S2 P-Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed (2) Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSD2019A |
Fairchild Semiconductor |
Dual P-Channel Power MOSFET | |
2 | SSD2007A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
3 | SSD2009A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
4 | SSD2025 |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET | |
5 | SSD2030N |
South Sea Semiconductor |
N-Channel MOSFET | |
6 | SSD2030P |
South Sea Semiconductor |
P-Channel Enhancement Mode MOSFET | |
7 | SSD20N03 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSD20N06 |
SeCoS |
N-channel MOSFET | |
9 | SSD20N06-90D |
SeCoS |
N-Channel MOSFET | |
10 | SSD20N06-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
11 | SSD20N10-250D |
SeCoS |
N-Channel MOSFET | |
12 | SSD20N15 |
SeCoS |
N-CHANNEL MOSFET |