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SSD2030N |
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| Part Number | SSD2030N |
| Manufacturer | South Sea Semiconductor |
| Description | SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 10V 30V 20A 55 @VGS = 4.5V G S D TO-252 D FEATURES Super high dense cell design for low RDS(ON).... |
| Features |
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package.
S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
30 + - 20 20 60 20 50 -55 to 175
Unit
V V A A A W
o
Drain-Source Diode Forward Current
a
IS
o
Maximum Power Dissipation @TC = 25 C Operating Junction and Storage Temperature Range
PD TJ, TSTG
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
a
R R
JC
3
o... |
| Document |
 SSD2030N Data Sheet
PDF 78.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSD2030P |
South Sea Semiconductor |
P-Channel Enhancement Mode MOSFET |
|
| 2 | SSD2007A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|
| 3 | SSD2009A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|
| 4 | SSD2011A |
Fairchild Semiconductor |
Dual P-CHANNEL POWER MOSFET |
|
| 5 | SSD2019A |
Fairchild Semiconductor |
Dual P-Channel Power MOSFET |
|