SSC8336GS1 - AFSEMI

SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET

Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.  Package Information  Ordering Informatio.

Features

 Applications
 Inverter; VDS VGS RDSon TYP ID 30V ±20V 16mR@10V 20mR@4V5 9A
 Pin configuration
 General Description Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.
 Package Information
 Ordering Information Device SSC8336GS1 Marking SSC 8336GS1 Package SOP8 Qty per Reel 2500 Reel Size 13 Inch SSC-1V0 http://.