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SSC8336GS1 |
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| Part Number | SSC8336GS1 |
| Manufacturer | AFSEMI |
| Description | Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable f... |
| Features |
Applications Inverter; VDS VGS RDSon TYP ID 30V ±20V 16mR@10V 20mR@4V5 9A Pin configuration General Description Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems. Package Information Ordering Information Device SSC8336GS1 Marking SSC 8336GS1 Package SOP8 Qty per Reel 2500 Reel Size 13 Inch SSC-1V0 http://... |
| Document |
 SSC8336GS1 Data Sheet
PDF 341.97KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
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