SSC8323GN3 - AFSEMI

SSC8323GN3 Dual P-Channel Enhancement Mode MOSFET

SSC8323GN3 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Package Information 8765 D1 D1 D2 D2 S1 G1 S2 G2 123 4 Package:DFN3x2 Unit:.

Features

VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 105mR@-1V8 ID -3.5A
 Applications
 Li Battery Charging;
 High Side DC/DC Converter;
 Load Switch;
 Power Management in Portable, Battery Powered Devices
 Pin configuration Top View
 General Description SSC8323GN3 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
 Package Information 8765 D1 D1 D2 D2 S1 G1 S2 G2 123 4.