SSC8325GS1 - AFSEMI

SSC8325GS1 Dual P-Channel Enhancement Mode MOSFET

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface .

Features

VDS VGS RDSon TYP 38mR@-4V5 ID ESD
 Applications
 Load Switch
 Portable Devices
 DCDC conversion -20V ±8V 47mR@-2V5 61mR@-1V8 -6A 3KV
 Pin Configuration
 General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and D: Drain; G: .