SSC8313GS1 - AFSEMI

SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET

Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and S1 G1 S2 G2 low in-line power dissipation are needed in a ver.

Features

VDS VGS RDSon TYP 38mR@-4V5 ID
 Applications
 Load Switch
 Portable Devices
 DCDC conversion -12V ±8V 47mR@-2V5 -6A 61mR@-1V8
 Pin Configuration
 General Description Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and S1 G1 S2 G2 low in-line power dissipation are needed in a very small D: Drain; G: Gate; S: Source outline surface mount .