SSC8330GQ4 - AFSEMI

SSC8330GQ4 Dual N-Channel Enhancement Mode MOSFET

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information SSC-1V0 Package: DFN3X3-8L http://www.afsemi.com 1 / 11 Analog Future SSC8330GQ4  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Sym.

Features

 Applications
 Load Switch VDS VGS RDSon TYP ID
 Isolated DC/DC Converters 9.5 mR@10V Q1 30V ±20V 15A 12.5mR@4V5
 DCDC conversion in Computing 8 mR@10V
 Pin configuration Q2 30V ±20V 18A 10mR@4V5 Bottom View Top View
 General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
 Package Information SSC-1V0 Package: DFN3X3-8L http://www.afsemi.com 1 / 11 Analog Future SSC8330GQ4
 Absolute Maximum Ratings @ TA = 25°C unless otherwise sp.