SSC8323GN2 - AFSEMI

SSC8323GN2 Dual P-Channel Enhancement Mode MOSFET

SSC8323GN2 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Package Information SSC-1V0 Package:DFN2x2 Unit:mm Dim Min Typ Max A 1.9.

Features

VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 105mR@-1V8 ID -3.5A
 Applications
 Li Battery Charging;
 High Side DC/DC Converter;
 Load Switch;
 Power Management in Portable, Battery Powered Devices
 Pin configuration Top View
 General Description SSC8323GN2 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
 Package Information SSC-1V0 Package:DFN2x2 Unit:mm .