SSC8013GS6 - AFSEMI

SSC8013GS6 P-Channel Enhancement Mode MOSFET

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface .

Features

VDS VGS RDSon TYP 38mR@-4V5 ID
 Applications
 Load Switch
 Portable Devices
 DCDC conversion -12V ±8V 47mR@-2V5 -3.8A 61mR@-1V8
 Pin Configuration
 General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabiliti.