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SSC8325GS1 |
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| Part Number | SSC8325GS1 |
| Manufacturer | AFSEMI |
| Description | Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications s... |
| Features |
VDS VGS
RDSon TYP 38mR@-4V5
ID ESD
Applications Load Switch Portable Devices DCDC conversion -20V ±8V 47mR@-2V5 61mR@-1V8 -6A 3KV Pin Configuration General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and D: Drain; G: ... |
| Document |
 SSC8325GS1 Data Sheet
PDF 198.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSC8322GN2 |
AFSEMI |
Dual N-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8323GN2 |
AFSEMI |
Dual P-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8323GN3 |
AFSEMI |
Dual P-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8326GS1V1.0 |
AFSEMI |
Dual N-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8329GS1 |
AFSEMI |
Dual P-Channel Enhancement Mode MOSFET |
|