SSC8062GS1 - AFSEMI

SSC8062GS1 N-Channel Enhancement Mode MOSFET

 Pin configuration SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver.  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8062GS1  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbo.

Features

 Applications VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6A
 Load Switcing;
 PWM application
 General Description
 Pin configuration SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver.
 Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8062GS1
 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Drain Current Continuous Pulse Total Power Dissipation (.