SSC8062GS1 |
Part Number | SSC8062GS1 |
Manufacturer | AFSEMI |
Description | Pin configuration SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver. Package Information ⑧ ⑦ ⑥⑤ ①② ③④ S... |
Features |
Applications VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6A Load Switcing; PWM application General Description Pin configuration SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver. Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8062GS1 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Drain Current Continuous Pulse Total Power Dissipation (... |
Document |
SSC8062GS1 Data Sheet
PDF 124.41KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSC8062GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8066GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8013GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
4 | SSC8013GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
5 | SSC8015GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |