This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications. Package Information GS ③ ①② SOT23 Unit:mm SSC-4V0 http://www.afsemi.com 1/4 SSC8025GS6 Absolute .
VDS VGS -20V ±8V
RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5
ID ESD -4A 3kV
Applications
Load Switch
Portable Devices
DCDC Conversion
Pin configuration
Top View
D
General Description
This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.
Package Information
GS
③
①②
SOT23 Unit:mm
SSC-4V0
http://www.afsemi.com
1/4
SSC8025GS6
Absolute Maximum Ratings @ TA = 25°C u.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8020GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8020GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8020GS9 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8022GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
5 | SSC8023GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
6 | SSC8027GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
7 | SSC8028GT3 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
8 | SSC8028GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
9 | SSC8029GN2 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
10 | SSC8029GS6A |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
11 | SSC8013GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
12 | SSC8013GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET |