Pin Configuration SSC8062GT8 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver. Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8062GT8 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Vo.
Applications
VDS 60V
VGS ±20V
RDSon TYP 30mR@10V 35mR@4V5
ID 9A
E-tool;
E-Toy;
Motor Driver
General Description
Pin Configuration
SSC8062GT8 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver.
Package Information
Units:mm
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC8062GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Drain Current
Continuous Pulse
Total Power Dissipation (note1)
Operating a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8062GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8066GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8013GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
4 | SSC8013GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
5 | SSC8015GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
6 | SSC8019GN2 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
7 | SSC8020GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
8 | SSC8020GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
9 | SSC8020GS9 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
10 | SSC8022GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
11 | SSC8023GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
12 | SSC8025GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |