This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications Replace Digital Transistor Battery Operated Systems Power Supply Con.
VDS VGS
RDSon TYP
ID
240mR@4V5
280mR@2V5
20V ±8V
0.4A
410mR@1V8
450mR@1V5
General Description
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and
DMOS trench technology .This device particularly suits
low voltage applications, especially for battery powered
circuits, the tiny and thin outline saves PCB consumption.
Applications
Replace Digital Transistor
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Pin Configuration
Top View
Package Information
SSC-V1.0
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8020GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8020GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8022GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8023GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
5 | SSC8025GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
6 | SSC8027GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
7 | SSC8028GT3 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
8 | SSC8028GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
9 | SSC8029GN2 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
10 | SSC8029GS6A |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
11 | SSC8013GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
12 | SSC8013GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET |