SSC8015GS6 - AFSEMI

SSC8015GS6 P-Channel Enhancement Mode MOSFET

The SSC8015GS6 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switchand battery protection applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin Configuration Top View  Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:m.

Features

 VDS VGS -16V ±12V RDSon TYP 25mR@-4V5 33mR@-2V5 ID -4.5A
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 General Description The SSC8015GS6 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switchand battery protection applications. Applications
 Load Switch
 Portable Devices
 DCDC conversion Pin Configuration Top View
 Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8015GS6
 Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Ratin.