SSC8022GS6 - AFSEMI

SSC8022GS6 N-Channel Enhancement Mode MOSFET

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface .

Features

VDS 20V VGS ±12V RDSon TYP 35mR@4V5 45mR@2V5 ID 3.5A
 Applications
 Load Switch
 Portable Devices
 DCDC conversion
 Pin configuration
 General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
 Package .