SSC8033GS6 - AFSEMI

SSC8033GS6 P-Channel Enhancement Mode MOSFET

Top View D This P-Channel enhancement mode power FETs are 3 produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, 12 and low in-line power loss a.

Features

 Applications
 TFT panel power switch; VDS -30V VGS ±20V RDSon TYP 55mR@-10V 68mR@-4V5 ID -3A
 High Side DC/DC Converter
 High Side Driver for Brushless DC Motor
 Portable DVD, DPF
 Pin configuration
 General Description Top View D This P-Channel enhancement mode power FETs are 3 produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, 12 and low in-line power loss are ne.