SSC8033GS6 |
Part Number | SSC8033GS6 |
Manufacturer | AFSEMI |
Description | Top View D This P-Channel enhancement mode power FETs are 3 produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is part... |
Features |
Applications TFT panel power switch; VDS -30V VGS ±20V RDSon TYP 55mR@-10V 68mR@-4V5 ID -3A High Side DC/DC Converter High Side Driver for Brushless DC Motor Portable DVD, DPF Pin configuration General Description Top View D This P-Channel enhancement mode power FETs are 3 produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, 12 and low in-line power loss are ne... |
Document |
SSC8033GS6 Data Sheet
PDF 548.95KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | SSC8033GS1 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
2 | SSC8033GS3 |
SPIRIT-SEMI |
P-Channel Enhancement Mode MOSFET | |
3 | SSC8030GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8030GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
5 | SSC8030GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |