This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications Load Switch PC/NB DCDC conversion Pin configuration Top View S D G Package Information Unit: mm TO220 SSC-V1.0 http://www.afsemi.com 1/4 Analog Future SSC8032GT4 .
VDS 30V
VGS ±20V
RDSon TYP 12mR@10V 16mR@4V5
ID 56A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
PC/NB
DCDC conversion
Pin configuration
Top View
S D G
Package Information
Unit: mm TO220
SSC-V1.0
http://www.afsemi.com
1/4
Analog Future
SSC8032GT4
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Not.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8030GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8030GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8030GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8030GT4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
5 | SSC8030GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
6 | SSC8033GS1 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
7 | SSC8033GS3 |
SPIRIT-SEMI |
P-Channel Enhancement Mode MOSFET | |
8 | SSC8033GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
9 | SSC8034GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
10 | SSC8034GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
11 | SSC8035GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
12 | SSC8035GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET |