This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications Load Switch PC/NB DCDC conversion Pin configuration Top View Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com h // S i P 1/4 Analog Futur.
VDS 30V
VGS ±20V
RDSon TYP 8.5mR@10V 10.5mR@4V5
ID 12A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
PC/NB
DCDC conversion
Pin configuration
Top View
Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-V1.0
http://www.afsemi.com h // S i P
1/4
Analog Future
SSC8030GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8030GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8030GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8030GT4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8030GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
5 | SSC8032GT4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
6 | SSC8033GS1 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
7 | SSC8033GS3 |
SPIRIT-SEMI |
P-Channel Enhancement Mode MOSFET | |
8 | SSC8033GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
9 | SSC8034GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
10 | SSC8034GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
11 | SSC8035GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
12 | SSC8035GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET |