This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Package Information Applications Load Switch Portable Devices DCDC conversion Pin configuration Top View D 3 12 GS ③ ①② SOT23 Units:.
VDS VGS 30V ±12V
RDSon TYP 24mR@10V 27mR@4V5 39mR@2V5
ID 6A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Package Information
Applications
Load Switch
Portable Devices
DCDC conversion
Pin configuration
Top View
D 3
12 GS
③
①②
SOT23
Units:mm
SSC-V1.0
http://www.afsemi.com h // S i P
1/4
Analog Future
SSC8034GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Pa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8034GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8030GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8030GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8030GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
5 | SSC8030GT4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
6 | SSC8030GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
7 | SSC8032GT4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
8 | SSC8033GS1 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
9 | SSC8033GS3 |
SPIRIT-SEMI |
P-Channel Enhancement Mode MOSFET | |
10 | SSC8033GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
11 | SSC8035GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
12 | SSC8035GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET |